TPCC8065-H,LQ(S

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MOSFET N-Ch 30V FET 13A 18W 1350pF 20nC

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MOSFET N-Ch 30V FET 13A 18W 1350pF 20nC

Products specifications

Number of Channels	1 Channel
Technology	Si
Transistor Polarity	N-Channel
Pd - Power Dissipation	18 W
Vds - Drain-Source Breakdown Voltage	30 V
Packaging	Reel
Id - Continuous Drain Current	13 A
Configuration	Single
Qg - Gate Charge	20 nC
Rds On - Drain-Source Resistance	14.5 mOhms

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Products specifications

Number of Channels	1 Channel
Technology	Si
Transistor Polarity	N-Channel
Pd - Power Dissipation	18 W
Vds - Drain-Source Breakdown Voltage	30 V
Packaging	Reel
Id - Continuous Drain Current	13 A
Configuration	Single
Qg - Gate Charge	20 nC
Rds On - Drain-Source Resistance	14.5 mOhms