MOSFET N-Ch 30V FET 20A 32W 1600pF 23nC
Products specifications
Pd - Power Dissipation | 32 W |
Id - Continuous Drain Current | 20 A |
Packaging | Reel |
Configuration | Single |
Technology | Si |
Qg - Gate Charge | 23 nC |
Vds - Drain-Source Breakdown Voltage | 30 V |
Rds On - Drain-Source Resistance | 10.6 mOhms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |