MOSFET N and P Ch 30V FET 9A 1.5W 1190pF
Products specifications
Configuration | Dual |
Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Number of Channels | 2 Channel |
Qg - Gate Charge | 39 nC, 17 nC |
Technology | Si |
Rds On - Drain-Source Resistance | 23 mOhms, 17 mOhms |
Packaging | Cut Tape, MouseReel, Reel |
Id - Continuous Drain Current | 7.4 A, 9 A |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel, P-Channel |
Pd - Power Dissipation | 1.5 W, 1.5 W |
Vgs th - Gate-Source Threshold Voltage | 800 mV, 1.3 V |