TPC8129,LQ(S

MOSFET N-Ch -30V FET 1650pF -9A 1.9W

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MOSFETs N-Ch -30V FET 1650pF -9A 1.9W
Lead Time: 98 Days

Products specifications

Technology	Si
Pd - Power Dissipation	1.9 W
Configuration	Single
Number of Channels	1 Channel
Id - Continuous Drain Current	9 A
Rds On - Drain-Source Resistance	28 mOhms
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Technology	Si
Pd - Power Dissipation	1.9 W
Configuration	Single
Number of Channels	1 Channel
Id - Continuous Drain Current	9 A
Rds On - Drain-Source Resistance	28 mOhms
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Packaging	Cut Tape, MouseReel, Reel