MOSFET N-Ch 30V FET 15A 1.9W 1800pF
Products specifications
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 15 A |
Number of Channels | 1 Channel |
Technology | Si |
Transistor Polarity | N-Channel |
Configuration | Single |
Packaging | Reel |
Pd - Power Dissipation | 1.9 W |
Rds On - Drain-Source Resistance | 11.1 mOhms |