MOSFET N-Ch 30V FET 11A 1.9W 1100pF
Products specifications
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 19 mOhms |
Pd - Power Dissipation | 1.9 W |
Technology | Si |
Configuration | Single |
Packaging | Reel |
Id - Continuous Drain Current | 11 A |
Vds - Drain-Source Breakdown Voltage | 30 V |