MOSFET N-Ch 30V FET 18A 1.9W 2400pF
Products specifications
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 7.3 mOhms |
Technology | Si |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 18 A |
Transistor Polarity | N-Channel |
Packaging | Reel |
Pd - Power Dissipation | 1.9 W |