MOSFET MOSFET N-Ch 30V 12A
Products specifications
Packaging | Reel |
Vgs - Gate-Source Voltage | 20 V |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 11.4 mOhms |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 1.9 W |
Id - Continuous Drain Current | 12 A |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Configuration | Single |