MOSFET P-Ch FET RDS 33mohm IDSS -10uA VDS -20V
Products specifications
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 150 mOhms |
Technology | Si |
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Packaging | Cut Tape, MouseReel, Reel |
Channel Mode | Enhancement |
Configuration | Single |
Id - Continuous Drain Current | 5.5 A |