MOSFET N-Ch 60V FET 6.1A 2.2W 640pF
Products specifications
Packaging | Reel |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 2.2 W |
Transistor Polarity | N-Channel |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 60 V |
Technology | Si |
Id - Continuous Drain Current | 6.1 A |
Rds On - Drain-Source Resistance | 63 mOhms |