TP89R103NL,LQ

MOSFET N-Ch DTMOS VII-H 1.9W 630pF 15A 30V

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MOSFETs N-Ch DTMOS VII-H 1.9W 630pF 15A 30V
Lead Time: 16 Days

Products specifications

Pd - Power Dissipation	1.9 W
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Vgs th - Gate-Source Threshold Voltage	2.3 V
Technology	Si
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	9.8 nC
Id - Continuous Drain Current	15 A
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	10.4 mOhms
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	30 V
Maximum Operating Temperature	+ 150 C

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Products specifications

Pd - Power Dissipation	1.9 W
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Vgs th - Gate-Source Threshold Voltage	2.3 V
Technology	Si
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	9.8 nC
Id - Continuous Drain Current	15 A
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	10.4 mOhms
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	30 V
Maximum Operating Temperature	+ 150 C