MOSFETs N-Ch DTMOS VII-H 1.9W 1050pF 19A 30V
Lead Time: 0 Days
Products specifications
Qg - Gate Charge | 17 nC |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 7 mOhms |
Vgs th - Gate-Source Threshold Voltage | 2.3 V |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs - Gate-Source Voltage | 20 V |
Transistor Polarity | N-Channel |
Technology | Si |
Id - Continuous Drain Current | 19 A |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |
Configuration | Single |
Pd - Power Dissipation | 1.9 W |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |