TK9J90E,S1E

MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN
Lead Time: 88 Days

SKU: TK9J90E,S1E

Availability: 5259 in stock

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R 76.68

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R 45.59

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MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN
Lead Time: 88 Days

Products specifications

Channel Mode	Enhancement
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2.5 V
Rds On - Drain-Source Resistance	1.3 Ohms
Pd - Power Dissipation	250 W
Configuration	Single
Qg - Gate Charge	46 nC
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	9 A
Vgs - Gate-Source Voltage	10 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	900 V
Mounting Style	Through Hole

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Products specifications

Channel Mode	Enhancement
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2.5 V
Rds On - Drain-Source Resistance	1.3 Ohms
Pd - Power Dissipation	250 W
Configuration	Single
Qg - Gate Charge	46 nC
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	9 A
Vgs - Gate-Source Voltage	10 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	900 V
Mounting Style	Through Hole

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