TK9A60D(STA4,Q,M)

R 1.00

MOSFET N-Ch MOS 9A 600V 45W 1200pF 0.83

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MOSFET N-Ch MOS 9A 600V 45W 1200pF 0.83

Products specifications

Configuration	Single
Pd - Power Dissipation	45 W
Number of Channels	1 Channel
Technology	Si
Rds On - Drain-Source Resistance	830 mOhms
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Transistor Polarity	N-Channel
Id - Continuous Drain Current	9 A

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Products specifications

Configuration	Single
Pd - Power Dissipation	45 W
Number of Channels	1 Channel
Technology	Si
Rds On - Drain-Source Resistance	830 mOhms
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Transistor Polarity	N-Channel
Id - Continuous Drain Current	9 A