MOSFET N-Ch MOS 8.5A 550V 40W 1050pF 0.86
Products specifications
Configuration | Single |
Rds On - Drain-Source Resistance | 860 mOhms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 40 W |
Id - Continuous Drain Current | 8.5 A |
Vds - Drain-Source Breakdown Voltage | 550 V |
Mounting Style | Through Hole |
Technology | Si |