MOSFET N-Ch 60V 1990pF 29nC 50A 34W
Products specifications
Id - Continuous Drain Current | 50 A |
Configuration | Single |
Technology | Si |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 36 W |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Channel Mode | Enhancement |
Qg - Gate Charge | 28.3 nC |
Vgs - Gate-Source Voltage | 20 V |
Rds On - Drain-Source Resistance | 6.1 mOhms |
Mounting Style | Through Hole |