MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC
Products specifications
Rds On - Drain-Source Resistance | 420 mOhms |
Vgs th - Gate-Source Threshold Voltage | 3.7 V |
Tradename | DTMOSIV |
Transistor Polarity | N-Channel |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 600 V |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 8 A |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 80 W |
Technology | Si |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 30 V |
Qg - Gate Charge | 18.5 nC |