MOSFET N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm
Products specifications
Configuration | Single |
Rds On - Drain-Source Resistance | 840 mOhms |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Transistor Polarity | N-Channel |
Technology | Si |
Id - Continuous Drain Current | 8 A |
Tradename | DTMOSIV |