MOSFET N-Ch 8A 30W FET 600V 570pF 18.5nC
Products specifications
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 600 V |
Configuration | Single |
Tradename | DTMOSIV |
Vgs th - Gate-Source Threshold Voltage | 3.7 V |
Pd - Power Dissipation | 30 W |
Rds On - Drain-Source Resistance | 420 mOhms |
Number of Channels | 1 Channel |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 18.5 nC |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 8 A |