MOSFET Power MOSFET N-Channel
Products specifications
Qg - Gate Charge | 22 nC |
Pd - Power Dissipation | 30 W |
Vgs - Gate-Source Voltage | 30 V |
Id - Continuous Drain Current | 8 A |
Rds On - Drain-Source Resistance | 440 mOhms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Configuration | Single |
Packaging | Tube |
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Tradename | DTMOSIV |
Vgs th - Gate-Source Threshold Voltage | 3 V |