MOSFET N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm
Products specifications
Configuration | Single |
Technology | Si |
Channel Mode | Enhancement |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 500 V |
Rds On - Drain-Source Resistance | 850 mOhms |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 10 V |
Tradename | DTMOSIV |
Pd - Power Dissipation | 40 W |
Qg - Gate Charge | 16 nC |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 8 A |