MOSFET N-Ch MOS 7.5A 500V 35W 700pF 1.04 Ohm
Products specifications
Rds On - Drain-Source Resistance | 760 mOhms |
Id - Continuous Drain Current | 7.5 A |
Vds - Drain-Source Breakdown Voltage | 500 V |
Vgs th - Gate-Source Threshold Voltage | 4.4 V |
Tradename | DTMOSIV |
Vgs - Gate-Source Voltage | 30 V |
Number of Channels | 1 Channel |
Technology | Si |
Configuration | Single |
Pd - Power Dissipation | 35 W |
Qg - Gate Charge | 16 nC |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |