TK80S04K3L(T6L1,NQ

R 1.00

MOSFET N-Ch MOS 80A 40V 100W 4340pF 0.0031

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MOSFET N-Ch MOS 80A 40V 100W 4340pF 0.0031

Products specifications

Vds - Drain-Source Breakdown Voltage	40 V
Rds On - Drain-Source Resistance	3.1 mOhms
Id - Continuous Drain Current	80 A
Packaging	Reel
Technology	Si
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Pd - Power Dissipation	100 W
Configuration	Single

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Products specifications

Vds - Drain-Source Breakdown Voltage	40 V
Rds On - Drain-Source Resistance	3.1 mOhms
Id - Continuous Drain Current	80 A
Packaging	Reel
Technology	Si
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Pd - Power Dissipation	100 W
Configuration	Single