MOSFET N-Ch DTMOSIV 600 V 60W 490pF 15nC 7A
Products specifications
Pd - Power Dissipation | 60 W |
Vgs - Gate-Source Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 600 V |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 7 A |
Tradename | DTMOSIV |
Technology | Si |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 500 mOhms |
Vgs th - Gate-Source Threshold Voltage | 3.7 V |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Qg - Gate Charge | 15 nC |