MOSFET Power MOSFET N-Channel
Products specifications
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Vgs - Gate-Source Voltage | 30 V |
Rds On - Drain-Source Resistance | 660 mOhms |
Pd - Power Dissipation | 60 W |
Id - Continuous Drain Current | 6.8 A |
Number of Channels | 1 Channel |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 15 nC |
Packaging | Cut Tape, MouseReel, Reel |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 650 V |
Configuration | Single |