MOSFET DTMOSIV 600V 600mOhm DPKw/Hgh Speed Diode
Products specifications
Id - Continuous Drain Current | 7 A |
Pd - Power Dissipation | 60 W |
Rds On - Drain-Source Resistance | 540 mOhms |
Technology | Si |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 4.5 V |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 600 V |
Qg - Gate Charge | 16 nC |
Vgs - Gate-Source Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Configuration | Single |