MOSFET PLN MOS 900V 2000m (VGS=10V) TO-3PN
Products specifications
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Technology | Si |
Qg - Gate Charge | 32 nC |
Id - Continuous Drain Current | 7 A |
Transistor Polarity | N-Channel |
Configuration | Single |
Pd - Power Dissipation | 200 W |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 1.6 Ohms |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Vgs - Gate-Source Voltage | 30 V |
Vds - Drain-Source Breakdown Voltage | 900 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |