MOSFET N-Ch 7A 30W FET 600V 490pF 15nC
Products specifications
Rds On - Drain-Source Resistance | 600 mOhms |
Vgs th - Gate-Source Threshold Voltage | 2.7 V |
Pd - Power Dissipation | 30 W |
Number of Channels | 1 Channel |
Qg - Gate Charge | 15 nC |
Mounting Style | Through Hole |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 600 V |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 7 A |