MOSFET Power MOSFET N-Channel
Products specifications
Rds On - Drain-Source Resistance | 540 mOhms |
Channel Mode | Enhancement |
Configuration | Single |
Id - Continuous Drain Current | 7 A |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 30 V |
Vds - Drain-Source Breakdown Voltage | 600 V |
Qg - Gate Charge | 16 nC |
Number of Channels | 1 Channel |
Technology | Si |
Packaging | Tube |
Mounting Style | Through Hole |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Pd - Power Dissipation | 30 W |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |