TK7A55D(STA4,Q,M)

R 1.00

MOSFET N-Ch MOS 7A 550V 35W 700pF 1.25

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MOSFET N-Ch MOS 7A 550V 35W 700pF 1.25

Products specifications

Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	550 V
Rds On - Drain-Source Resistance	1.25 Ohms
Pd - Power Dissipation	35 W
Technology	Si
Id - Continuous Drain Current	7 A
Mounting Style	Through Hole
Number of Channels	1 Channel
Configuration	Single

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Products specifications

Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	550 V
Rds On - Drain-Source Resistance	1.25 Ohms
Pd - Power Dissipation	35 W
Technology	Si
Id - Continuous Drain Current	7 A
Mounting Style	Through Hole
Number of Channels	1 Channel
Configuration	Single