TK7A45DA(STA4,Q,M)

R 1.00

MOSFET N-Ch MOS 6.5A 450V 35W 540pF 1.2 Ohm

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MOSFET N-Ch MOS 6.5A 450V 35W 540pF 1.2 Ohm

Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	450 V
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	1.2 Ohms
Pd - Power Dissipation	35 W
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Id - Continuous Drain Current	6.5 A
Technology	Si

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Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	450 V
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	1.2 Ohms
Pd - Power Dissipation	35 W
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Id - Continuous Drain Current	6.5 A
Technology	Si