MOSFET N-Ch TT-MOSIX 600V 40W 1130pF 10A
Products specifications
Rds On - Drain-Source Resistance | 750 mOhms |
Pd - Power Dissipation | 40 W |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 30 nC |
Id - Continuous Drain Current | 10 A |
Packaging | Tube |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 30 V |
Vds - Drain-Source Breakdown Voltage | 600 V |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Minimum Operating Temperature | - |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Configuration | Single |