MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044
Products specifications
Technology | Si |
Qg - Gate Charge | 130 nC |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vds - Drain-Source Breakdown Voltage | 120 V |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 179 A |
Number of Channels | 1 Channel |
Vgs - Gate-Source Voltage | 10 V |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 4.4 mOhms |
Mounting Style | Through Hole |
Pd - Power Dissipation | 255 W |
Configuration | Single |