TK72E08N1,S1X

R 1.00

MOSFET 80V N-Ch PWR FET 157A 192W 81nC

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MOSFET 80V N-Ch PWR FET 157A 192W 81nC

Products specifications

Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	157 A
Technology	Si
Qg - Gate Charge	81 nC
Mounting Style	Through Hole
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	4.3 mOhms
Vds - Drain-Source Breakdown Voltage	80 V
Configuration	Single
Pd - Power Dissipation	192 W

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Products specifications

Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	157 A
Technology	Si
Qg - Gate Charge	81 nC
Mounting Style	Through Hole
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	4.3 mOhms
Vds - Drain-Source Breakdown Voltage	80 V
Configuration	Single
Pd - Power Dissipation	192 W