TK72A12N1,S4X

MOSFET MOSFET NCh3.7ohm VGS10V10uAVDS120V

SKU: TK72A12N1,S4X

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R 53.23

R 45.85

R 40.06

R 39.26

R 35.84

R 32.94

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MOSFET MOSFET NCh3.7ohm VGS10V10uAVDS120V

Products specifications

Qg - Gate Charge	130 nC
Rds On - Drain-Source Resistance	3.7 mOhms
Pd - Power Dissipation	45 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Technology	Si
Id - Continuous Drain Current	72 A
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	120 V
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	4 V
Number of Channels	1 Channel
Channel Mode	Enhancement
Transistor Polarity	N-Channel

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Products specifications

Qg - Gate Charge	130 nC
Rds On - Drain-Source Resistance	3.7 mOhms
Pd - Power Dissipation	45 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Technology	Si
Id - Continuous Drain Current	72 A
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	120 V
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	4 V
Number of Channels	1 Channel
Channel Mode	Enhancement
Transistor Polarity	N-Channel