MOSFET MOSFET NCh 3.7ohm VGS10V10uAVDS80V
Products specifications
Id - Continuous Drain Current | 72 A |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Qg - Gate Charge | 81 nC |
Vgs - Gate-Source Voltage | 20 V |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 3.7 mOhms |
Mounting Style | Through Hole |
Channel Mode | Enhancement |
Pd - Power Dissipation | 45 W |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 80 V |
Transistor Polarity | N-Channel |