MOSFET N-Ch 60V 1990pF 26nC 74A 66W
Products specifications
Vds - Drain-Source Breakdown Voltage | 60 V |
Qg - Gate Charge | 26 nC |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Vgs - Gate-Source Voltage | 20 V |
Channel Mode | Enhancement |
Packaging | Cut Tape, Reel |
Configuration | Single |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 5 mOhms |
Technology | Si |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 66 W |
Id - Continuous Drain Current | 74 A |