MOSFET Power MOSFET N-Channel
Products specifications
Channel Mode | Enhancement |
Technology | Si |
Qg - Gate Charge | 11 nC |
Rds On - Drain-Source Resistance | 890 mOhms |
Number of Channels | 1 Channel |
Configuration | Single |
Transistor Polarity | N-Channel |
Tradename | DTMOSIV |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Packaging | Tube |
Id - Continuous Drain Current | 5.8 A |
Vds - Drain-Source Breakdown Voltage | 650 V |
Pd - Power Dissipation | 60 W |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 30 V |