MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC
Products specifications
Id - Continuous Drain Current | 6.2 A |
Technology | Si |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 820 mOhms |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 60 W |
Vgs - Gate-Source Voltage | 10 V |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs th - Gate-Source Threshold Voltage | 2.7 V |
Transistor Polarity | N-Channel |
Configuration | Single |
Qg - Gate Charge | 12 nC |
Maximum Operating Temperature | + 150 C |