MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm
Products specifications
Vds - Drain-Source Breakdown Voltage | 650 V |
Configuration | Single |
Number of Channels | 1 Channel |
Technology | Si |
Rds On - Drain-Source Resistance | 1.11 Ohms |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 6 A |