MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC
Products specifications
Vgs - Gate-Source Voltage | 30 V |
Vds - Drain-Source Breakdown Voltage | 600 V |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 680 mOhms |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 6.2 A |
Mounting Style | Through Hole |
Configuration | Single |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 3.7 V |
Qg - Gate Charge | 12 nC |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 30 W |