MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm
Products specifications
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 16 nC |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 600 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Configuration | Single |
Pd - Power Dissipation | 40 W |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Rds On - Drain-Source Resistance | 1.25 Ohms |
Id - Continuous Drain Current | 6 A |
Technology | Si |
Mounting Style | Through Hole |