TK6A55DA(STA4,Q,M)

R 1.00

MOSFET N-Ch MOS 5.5A 550V 35W 600pF 1.48

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MOSFET N-Ch MOS 5.5A 550V 35W 600pF 1.48

Products specifications

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	1.48 Ohms
Technology	Si
Id - Continuous Drain Current	5.5 A
Mounting Style	Through Hole
Pd - Power Dissipation	35 W
Vds - Drain-Source Breakdown Voltage	550 V
Configuration	Single

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Products specifications

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	1.48 Ohms
Technology	Si
Id - Continuous Drain Current	5.5 A
Mounting Style	Through Hole
Pd - Power Dissipation	35 W
Vds - Drain-Source Breakdown Voltage	550 V
Configuration	Single