TK6A53D(STA4,Q,M)

R 1.00

MOSFET N-Ch MOS 6A 525V 35W 600pF 1.3 Ohm

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MOSFET N-Ch MOS 6A 525V 35W 600pF 1.3 Ohm

Products specifications

Rds On - Drain-Source Resistance	1.3 Ohms
Id - Continuous Drain Current	6 A
Transistor Polarity	N-Channel
Pd - Power Dissipation	35 W
Technology	Si
Configuration	Single
Mounting Style	Through Hole
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	525 V

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Products specifications

Rds On - Drain-Source Resistance	1.3 Ohms
Id - Continuous Drain Current	6 A
Transistor Polarity	N-Channel
Pd - Power Dissipation	35 W
Technology	Si
Configuration	Single
Mounting Style	Through Hole
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	525 V