TK6A50D(STA4,Q,M)

R 1.00

MOSFET N-Ch MOS 6A 500V 35W 540pF 1.4 Ohm

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MOSFET N-Ch MOS 6A 500V 35W 540pF 1.4 Ohm

Products specifications

Vds - Drain-Source Breakdown Voltage	500 V
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	1.4 Ohms
Technology	Si
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Id - Continuous Drain Current	6 A
Pd - Power Dissipation	35 W
Configuration	Single

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Products specifications

Vds - Drain-Source Breakdown Voltage	500 V
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	1.4 Ohms
Technology	Si
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Id - Continuous Drain Current	6 A
Pd - Power Dissipation	35 W
Configuration	Single