MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK
Products specifications
Technology | Si |
Id - Continuous Drain Current | 136 A |
Vds - Drain-Source Breakdown Voltage | 100 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 81 nC |
Packaging | Cut Tape, MouseReel, Reel |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 4.5 mOhms |
Pd - Power Dissipation | 156 W |
Vgs - Gate-Source Voltage | 10 V |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |