TK65A10N1,S4X

MOSFET MOSFET NCh 4ohm VGS10V10uAVDS100V

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MOSFETs MOSFET NCh 4ohm VGS10V10uAVDS100V

Products specifications

Qg - Gate Charge	81 nC
Vds - Drain-Source Breakdown Voltage	100 V
Rds On - Drain-Source Resistance	4 mOhms
Pd - Power Dissipation	45 W
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	4 V
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Configuration	Single
Id - Continuous Drain Current	65 A
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Technology	Si

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Products specifications

Qg - Gate Charge	81 nC
Vds - Drain-Source Breakdown Voltage	100 V
Rds On - Drain-Source Resistance	4 mOhms
Pd - Power Dissipation	45 W
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	4 V
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Configuration	Single
Id - Continuous Drain Current	65 A
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Technology	Si