TK650A60F,S4X

MOSFET N-Ch TT-MOSIX 600V 45W 1320pF 11A

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R 38.74

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R 20.21

R 18.29

R 14.84

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MOSFETs N-Ch TT-MOSIX 600V 45W 1320pF 11A

Products specifications

Packaging	Tube
Pd - Power Dissipation	45 W
Vgs - Gate-Source Voltage	30 V
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Mounting Style	Through Hole
Id - Continuous Drain Current	11 A
Rds On - Drain-Source Resistance	650 mOhms
Configuration	Single
Minimum Operating Temperature	-
Number of Channels	1 Channel
Qg - Gate Charge	34 nC
Vds - Drain-Source Breakdown Voltage	600 V

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Products specifications

Packaging	Tube
Pd - Power Dissipation	45 W
Vgs - Gate-Source Voltage	30 V
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Mounting Style	Through Hole
Id - Continuous Drain Current	11 A
Rds On - Drain-Source Resistance	650 mOhms
Configuration	Single
Minimum Operating Temperature	-
Number of Channels	1 Channel
Qg - Gate Charge	34 nC
Vds - Drain-Source Breakdown Voltage	600 V