TK62N60X,S1F

MOSFET DTMOSIV-High Speed 600V 40mOhmmax

Availability: 60 in stock

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R 304.89

R 203.96

R 184.73

R 153.63

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MOSFETs DTMOSIV-High Speed 600V 40mOhmmax
Lead Time: 168 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	3.5 V
Pd - Power Dissipation	400 W
Number of Channels	1 Channel
Tradename	DTMOSIV
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Technology	Si
Rds On - Drain-Source Resistance	33 mOhms
Transistor Polarity	N-Channel
Qg - Gate Charge	135 nC
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	61.8 A
Configuration	Single
Channel Mode	Enhancement

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Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	3.5 V
Pd - Power Dissipation	400 W
Number of Channels	1 Channel
Tradename	DTMOSIV
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Technology	Si
Rds On - Drain-Source Resistance	33 mOhms
Transistor Polarity	N-Channel
Qg - Gate Charge	135 nC
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	61.8 A
Configuration	Single
Channel Mode	Enhancement