TK62N60W,S1VF

MOSFET DTMOSIV 600V 40mOhm 61.8A 400W 6500pF

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R 315.43

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R 262.47

R 253.77

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MOSFETs DTMOSIV 600V 40mOhm 61.8A 400W 6500pF
Lead Time: 47 Days

Products specifications

Transistor Polarity	N-Channel
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	33 mOhms
Pd - Power Dissipation	400 W
Tradename	DTMOSIV
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	3.7 V
Id - Continuous Drain Current	61.8 A
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	180 nC
Technology	Si
Configuration	Single
Vgs - Gate-Source Voltage	30 V

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Products specifications

Transistor Polarity	N-Channel
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	33 mOhms
Pd - Power Dissipation	400 W
Tradename	DTMOSIV
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	3.7 V
Id - Continuous Drain Current	61.8 A
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	180 nC
Technology	Si
Configuration	Single
Vgs - Gate-Source Voltage	30 V